Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 40, Issue 12, Pages 3798-3802Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/40/12/036
Keywords
-
Categories
Ask authors/readers for more resources
We have reported the growth of p-type As-doped ZnO nanorod (NR) arrays and their electrical and electroluminescence (EL) properties. Well-directed ZnO NR arrays were grown on the Si substrate. The GaAs wafer was employed as an arsenic resource. Thermal anneal was performed to diffuse an As element into a ZnO NR. The As content increased with the increase in annealing time and temperature, which was measured utilizing energy dispersive x-ray spectroscopy in transmission electron microscopy (TEM). When enough As was doped, ZnO NR arrays began to show p-type behaviour and formed good p - n heterojunctions with the n-type Si substrate. The high-resolution TEM (HRTEM) was employed to measure the lattice structure change in the ZnO NR before and after As doping. The ultraviolet EL spectrum of the n-Si/p-ZnO NR arrays' light emitting diode device was measured at room temperature and a peak at a wavelength of about 380 nm was observed in the spectrum.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available