Electronic and magnetic properties of FeSe thin film prepared on GaAs (001) substrate by metal-organic chemical vapor deposition

FeSe film was prepared on GaAs (001) substrate by low pressure metal-organic chemical vapor deposition. The x-ray diffraction measurement indicated that the sample was preferentially oriented with tetragonal structure. The structure relationship between FeSe epilayer and GaAs (001) substrate has been studied. The critical behavior in the temperature-dependent resistivity at similar to 290 K is close to the Curie temperature, which confirmed that the transformation from ferromagnetism to paramagnetism could be responsible for the critical behavior. (c) 2007 American Institute of Physics.