Journal
APPLIED SURFACE SCIENCE
Volume 253, Issue 17, Pages 7157-7161Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2007.02.181
Keywords
Al-doped ZnO (ZnO : Al); transparent conductive oxide (TCO); hydrogen treatment
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Al-doped ZnO (ZnO:Al) films prepared by RF magnetron co-sputtering at room temperature were thermally treated in hydrogen ambient at 300 degrees C to enhance the films' characteristics for transparent conductive oxide applications. The electrical properties of the hydrogen-annealed films were improved and preserved in air ambient, evert though the crystal structures of the films were not changed by the thermal treatment. The optical and oxygen bonding characteristics of ZnO:Al films manifested that absorbed oxygen species on the films were removed by the hydrogen-annealing process. These results supported that the development of the electrically reliable ZnO:Al films could be realized using the hydrogen-annealing process. (c) 2007 Elsevier B.V. All rights reserved.
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