Journal
ANALYTICAL CHEMISTRY
Volume 85, Issue 8, Pages 3955-3960Publisher
AMER CHEMICAL SOC
DOI: 10.1021/ac303528m
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Funding
- National Science Council [100-2628-E-009-023-MY3, 99-2120-M-007-011]
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Resistive random-access memory (ReRAM) has been of wide interest for its potential to replace flash memory in the next-generation nonvolatile memory roadmap. In this study, we have fabricated the Au/ZnO-nanowire/Au nanomemory device by electron beam lithography and, subsequently, utilized in situ transmission electron microscopy (TEM) to observe the atomic structure evolution from the initial state to the low-resistance state (LRS) in the ZnO nanowire. The element mapping of LRS showing that the nanowire was zinc dominant indicating that the oxygen vacancies were introduced after resistance switching. The results provided direct evidence, suggesting that the resistance change resulted from oxygen migration.
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