Journal
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume 88, Issue 1, Pages 111-117Publisher
SPRINGER HEIDELBERG
DOI: 10.1007/s00339-007-3972-2
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The interaction of Co thin films on atomically flat ZnO(000-1) has been investigated by low energy electron diffraction (LEED), scanning tunneling microscopy (STM) and Auger electron spectroscopy (AES). A high density of islands nucleates at the earliest stages of the growth and a subsequent Wolmer-Weber growth of these islands is observed. Upon annealing at 600 degrees C, an atomically flat surface (Zn,Co)O(000-1) is restored due to the diffusion of the Co into the semiconductor.
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