4.6 Article

Co interaction on ZnO(000-1) investigated by scanning tunneling microscopy

Journal

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume 88, Issue 1, Pages 111-117

Publisher

SPRINGER HEIDELBERG
DOI: 10.1007/s00339-007-3972-2

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The interaction of Co thin films on atomically flat ZnO(000-1) has been investigated by low energy electron diffraction (LEED), scanning tunneling microscopy (STM) and Auger electron spectroscopy (AES). A high density of islands nucleates at the earliest stages of the growth and a subsequent Wolmer-Weber growth of these islands is observed. Upon annealing at 600 degrees C, an atomically flat surface (Zn,Co)O(000-1) is restored due to the diffusion of the Co into the semiconductor.

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