Effects of postannealing on orientation and crystallinity of p-type transparent conducting CuScO2 thin films

Highly c-axis-oriented CuScO2 thin films were successfully fabricated from polycrystalline CuSCO2 thin films by pulsed laser deposition and followed by postannealing treatment. The oxygen pressure effects during postannealing on the surface morphology, and crystallographic and optical properties of the films were investigated. The growth orientation, crystallinity along both out-of-plane and in-plane directions, and surface morphology of the films were significantly improved by postannealing at an optimal oxygen pressure. Using a film postannealed under optimal annealing conditions, the optical and electrical properties of the film were measured. The optical average transmittance of the film was greater than 70% in the visible/near-infrared regions, and the energy gap for calculated direct allowed transition was 3.7 eV. The Hall coefficient measured using the van der Pauw electrode configuration was 1.9 x 10(+1) cm(3) C-1, indicating p-type conduction. The resistivity, carrier concentration, and Hall mobility of the film at room temperature were 9.9 x 10(+1) Omega cm, 3.2 x 10(+17) cm(-3), and 2.0 x 10(-1) cm(2) V-1 s(-1), respectively.