Journal
PHYSICAL REVIEW B
Volume 76, Issue 4, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.76.041301
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The g factor of a single self-assembled quantum dot is tuned by applying an electrical bias voltage. Individual InGaAs quantum dots embedded in a stripe mesa structure sandwiched by Schottky electrodes are studied by photoluminescence measurements. We find that under applied magnetic field a dot with an asymmetric shift for applied bias voltage shows an increase of the exciton g-factor absolute value by about 8%, while most of the dots with relatively symmetric shifts show no significant change. The anomalous g-value increase is discussed in terms of the Kondo effect.
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