Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 54, Issue 7, Pages 1771-1775Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2007.898460
Keywords
drive current; hafnium silicate; high-kappa; leakage current; mobility; NH3 nitridation; nitridation; phase separation; plasma nitridation
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The results of a systematic study on the effects of nitrogen incorporation into (60 % Hf/40 % Si) hafnium silicate/SiO2 dielectric stacks are presented. Several nitridation methods and processes are compared as a function of the highest performing SiO2 interlaver/high-K,/post-deposition anneal combination on each wafer. It is shown that nitrogen incorporation results in a reduction in not only leakage current density but also maximum drive current, and carrier mobility. The relative increase in leakage current density with measurement temperature is independent of nitridation method or process, which indicates that phase separation may not be a problem for 2-nm hafnium silicate dielectrics. Depending on exact performance requirements, a nitridation step may not be necessary, as its benefits are limited (on similar to 2.0 nm equivalent oxide thickness films) to a factor of 2 reduction in leakage current density, with 4% and 7% reduction in mobility and drive current, respectively.
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