Journal
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
Volume 55, Issue 7, Pages 1467-1475Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMTT.2007.900315
Keywords
dipole antennas; heterojunction bipolar transistors (HBTs); monolithic microwave integrated circuit (MMIC); receivers
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The integration of an on-chip folded dipole antenna with a monolithic 24-GHz receiver manufactured in a 0.8-mu m SiGe HBT process is presented. A high-resistivity silicon substrate (1000 Omega center dot cm) is used for the implemented circuit to improve the efficiency of the integrated antenna. Crosstalk between the antenna and spiral inductors is analyzed and isolation techniques are described. The receiver, including the receive and an optional transmit antenna, requires a chip area of 4.5 mm(2) and provides 30-dB conversion gain at 24 GHz with a power consumption of 960 mW.
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