Journal
PHYSICAL REVIEW B
Volume 76, Issue 4, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.76.045111
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Ambipolar carrier conduction has been observed in a metal-insulator-semiconductor field-effect transistor made using (BEDT-TTF)(TCNQ) crystals. The temperature dependence of the source current with the applied positive gate voltage exhibits metal-like behavior at around room temperature. The metal-like conduction transforms into thermal-activation-type behavior below 240 K. The I-S-V-DS curve for an applied gate voltage of 80 V exhibited a corresponding change in the curvature below 240 K.
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