High power and high efficiency green light emitting diode on free-standing semipolar (11(2)over-bar2) bulk GaN substrate

We demonstrate a high power green InGaN/GaN multiple-quantum-well (MQW) light emitting diode (LED) with a peak emission wavelength of 516 nm grown on low extended defect density semipolar ( 11(2) over bar 2 2) bulk GaN substrate by metal organic chemical vapor deposition. The output power and external quantum efficiency (EQE) at drive currents of 20 and 100 mA under direct current (DC) operation were 5.0 mW, 10.5% and 15.6 mW, 6.3%, respectively.