Journal
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
Volume 39, Issue 1, Pages 133-136Publisher
ELSEVIER
DOI: 10.1016/j.physe.2007.02.001
Keywords
Bi2O3; nanowires; chemical vapor deposition; preparation
Ask authors/readers for more resources
Bismuth oxide (Bi2O3) nanowires have been synthesized on Au-coated Si substrates by atmospheric pressure chemical vapor deposition (APCVD) approach using Bi(S2CNEt2)(3) as a precursor in the presence of oxygen. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) show that the Bi2O3 nanowires have a diameter in the range of 50-100 nm and a length of up to tens of microns. X-ray diffraction (XRD), energy-dispersive spectroscopy (EDS), high-resolution TEM and selected-area electron diffraction (SAED) demonstrate that the nanowires are composed of pure tetragonal phase beta-Bi2O3 single crystal. The growth of the Bi2O3 nanowires could refer to a vapor-liquid-solid (VLS) mechanism. (C) 2007 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available