Journal
IEEE ELECTRON DEVICE LETTERS
Volume 28, Issue 7, Pages 565-568Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2007.900295
Keywords
dopant segregation; Schottky barrier (SB) lowering; Schottky diode; silicide
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An experimental study on Schottky-barrier height (SBH) tuning using ion implantation followed by drive-in anneal of As, B, In, and P in preformed NiSi and PtSi films is presented. Measured on B-implanted NiSi and PtSi Schottky diodes, the effective SBH on n-type Si is altered to similar to 1.0 eV. For As- and P-implanted diodes, the SBH on p-type Si can be tuned to around 0.9 eV The process window for the most pronounced SBH modification is dopant dependent.
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