Threading dislocation behavior in AlN nucleation layers for GaN growth on 4H-SiC

Threading dislocations in thin (< 200 nm) AlN nucleation layers (NLs) grown by metal-organic chemical vapor deposition on top of 4H-SiC on-axis mesas with atomic-scale steps were analyzed by transmission electron microscopy. The AlN NL controlled threading dislocations in an overlying similar to 2 mu m GaN layer through two identified mechanisms: threading half-loop formation and dislocation bending at V-shaped pits. Threading dislocations in the AlN film could be traced directly to bilayer 4H-SiC steps at the substrate/film interface. These observations reveal several approaches to extended defect reduction in GaN films grown on 4H-SiC. (C) 2007 American Institute of Physics.