Preparation and photoinduced wettability conversion of superhydrophobic β-Ga2O3 nanowire film

High-yield uniform beta-Ga2O3 nanowire films with mesh structure on GaP substrate have been synthesized via heat treating porous GaP preevaporated Au under low vacuum. The single-crystalline beta-Ga2O3 nanowires have uniform diameters of about 100 nm and a preferential [001] growth direction along the axis. The as-prepared beta-Ga2O3 nanowire film reveals a superhydrophobic property. The remarkable photoinduced surface wettability conversion at beta-Ga2O3 nanowire film was found, which can be explained by the cooperation of the surface photosensitivity and the special nanostructure. (C) 2007 American Institute of Physics.