Journal
ADVANCED MATERIALS
Volume 19, Issue 13, Pages 1707-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200602110
Keywords
-
Ask authors/readers for more resources
InGaN nanodot arrays with improved optical properties, attributed to the strong localization of photogenerated carriers in the size-homogeneous nanodots, grown by nanoscale selective area epitaxy (NSAE) on electron-beam lithographically patterned templates are presented. The figure shows an array of 60 nm diameter cone-shaped InGaN nanodots with 200 nm spacing, and a single nanodot (inset).
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
