Nitride-based light emitting diodes with indium tin oxide electrode patterned by imprint lithography

The authors propose a simple, low cost, and mass producible imprint lithography method to texture indium tin oxide (ITO) contact layer of nitride-based light emitting diodes (LEDs). Under 20 mA current injection, it was found that forward voltages were 3.24, 3.25, and 3.24 V while the LED output powers were 11.7, 12.6, and 13.3 mW for the conventional ITO LED, ITO LED patterned with 1.75 mu m holes, and ITO LED patterned with 0.85 mu m holes, respectively. (C) 2007 American Institute of Physics.