Properties of amorphous Si thin film anodes prepared by pulsed laser deposition

Amorphous Si (a-Si) thin film anodes were prepared by pulsed laser deposition (PLD) at room temperature. Structures and properties of the thin films were investigated using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and electrochemical measurements. Galvanostatic charge/discharge tests of half cells using lithium counter electrode were conducted at a constant current density of 100 mu A/cm(2) in different voltage windows. Cyclic voltammetry (CV) was obtained between 0 and 1. 5 V at various scan rates from 0. 1 to 2 mV/s. The apparent diffusion coefficient (DL) calculated from the CV measurements was about similar to 10- 13 cm(2)/s. The Si thin film anode was also successfully coupled with LiCoO2 thin film cathode. The aSi/LiCoO2 full cell showed stable cycle performance between 1 and 4 V (C) 2006 Elsevier Ltd. All rights reserved.