Analysis for crystal structure of Bi(Fe,Sc)O3 thin films and their electrical properties

Thin films of Bi(Fe1-xScx)O-3 (BFSO) system were fabricated on (111)Pt/TiO2/SiO2/(100)Si substrates by chemical solution deposition to improve the electrical resistivity by substituting electrically unstable Fe3+ cations for stable Sc3+ cations. A single phase of perovskite was obtained in the range of x=0-0.30, in which selective replacement of Fe3+ and Sc3+ was confirmed in x=0-0.15 by using Raman measurement. The leakage current density of the BFSO films was reduced by increasing x. A well-saturated polarization-electric field hysteresis loop was obtained for BFSO films with x=0.15, showing remanent polarization of approximately 35 mu C/cm(2). (C) 2007 American Institute of Physics.