Journal
JOURNAL OF APPLIED PHYSICS
Volume 102, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2756517
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p-type ZnO thin films with significantly reduced band gaps were synthesized by heavy Cu incorporation at room temperature and followed by postdeposition annealing at 500 degrees C in air for 2 h. All the films were synthesized by rf magnetron sputtering on F-doped tin oxide-coated glass. The p-type conductivity was confirmed by Mott-Schottky plots and illuminated I-V analysis. The Cu+1 acceptor states (at substitutional sites) and their band-gap reduction were demonstrated by UV-visible absorption and x-ray excited valence band measurements. (C) 2007 American Institute of Physics.
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