Journal
ADVANCED MATERIALS
Volume 19, Issue 14, Pages 1864-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200602608
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A novel calamitic mesophase semiconductor based on symmetrically designed thiophene-naphthalene, 2,6-di(5'-n-octyl-2'-thienyl)naphthalene, is used as the active layer in a field-effect transistor and the device performance is studied (see figure). This mesogen has an excellently high mobility of 0.14 cm(2)V(-1)s(-1) in a polycrystalline film at room temperature.
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