Reduced injection current induced blueshift in an InGaN/GaN quantum-well light-emitting diode of prestrained growth

The authors demonstrate the smaller blueshift in increasing injection current level of an InGaN/GaN quantum-well (QW) light-emitting diode (LED) of a longer electroluminescence (EL) peak wavelength based on the prestrained growth technique when compared with the result of a LED of a shorter EL peak wavelength based on the conventional growth technique. The smaller blueshift can be attributed to more contribution to light emission from the deeper QWs of higher indium contents when the injection current level is increased in the prestrain sample. It can also be attributed to the stronger carrier localization because of the stronger composition clustering in the prestrain sample of higher indium contents. Carrier localization can reduce the influences of the quantum-confined Stark effect and its screening process. (c) 2007 American Institute of Physics.