Determination of the lateral barrier height of inhomogeneous Au/n-type InP/In Schottky barrier diodes

We have identically prepared Au/n-InP/In Schottky barrier diodes (SBDs). The barrier height for the Au/n-InP/In SBDs from the current-voltage characteristics has varied from 0.557 eV to 0.615 eV, and the ideality factor n from 1.002 to 1.087. We have determined a lateral homogeneous barrier height value of approximately 0.597 eV for the Au/n-InP/In SBD from the experimental linear relationship between barrier heights and ideality factors. The barrier height value obtained from the reverse bias C-2-V characteristics has varied from 0.512 eV to 0.572 eV and statistical analysis yields the mean Phi(C-V) = 0.562 +/- 0.004 eV. A doping density of about (2.90 +/- 0.05) x 10(15) cm(-3) has been determined from the reverse bias C-2-V characteristics.