Thermally induced transitions of CrN thin films

Annealing of CrN thin films in an inert atmosphere causes dissociation into Cr2N with N-2 release with an activation energy, E., of similar to 4.39 eV atom(-1) in the temperature range 1000-1250 degrees C. At higher temperatures the Cr2N dissociates into Cr and N-2 with E-a approximate to 3.15 eV atom(-1). These processes occur after recovery and recrystallization during which the lattice parameter decreases (from 4.162 to 4.142 angstrom) and the mean crystallite feature size increases (from 21 to 104 nm) compared to the as-deposited values. (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.