Journal
JOURNAL OF APPLIED PHYSICS
Volume 102, Issue 3, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2767226
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The interface properties of thin Gd2O3 films grown on Ge(001) are studied as a function of the oxidizing species used during the deposition. The mediation of molecular oxygen during growth produces a crystalline oxide with an atomically sharp and contamination-free interface on the Ge substrate. Conversely, an interface layer of substoichiometric germanium oxide occurs whenever atomic oxygen radicals are used. The two different Gd2O3/Ge interfacial configurations are discussed basing on thermodynamic arguments. (c) 2007 American Institute of Physics.
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