4.6 Article

Low-impedance VHF and UHF capacitive silicon bulk acoustic-wave resonators - Part II: Measurement and characterization

Journal

IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 54, Issue 8, Pages 2024-2030

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2007.901405

Keywords

bulk acoustic wave resonators; high-aspect-ratio polysilicon and single-crystal silicon (HARPSS); MEMS; micromachining; micromechanical resonators; silicon resonators

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In this part of the paper, extensive measurement results on the resonance, frequency tuning, and temperature characteristics of the silicon bulk acoustic-wave resonators (SiBARs) that were described in Part I will be presented and justified.

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