Journal
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
Volume 16, Issue 4, Pages 912-918Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JMEMS.2007.901123
Keywords
deep reactive ion etching (DRIE); hydrogen plasma; micromachining; silicon wafers; vertical etching
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A novel hydrogenation-assisted deep reactive ion etching of silicon is reported. The process uses sequential hydrogen-assisted passivation and plasma etching at low-density plasma powers to stimulate the vertical removal of the exposed Si substrate. The main feature of this technique is the sequential alternation of the electrodes while switching between different gases. Three-dimensional structures with aspect ratios in excess of 40: 1 and features as small as 0.7 mu m have been realized. The net etch rate is about 0.25 mu m/min, although higher rates are expected to be achievable.
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