Investigation of metallic interdiffusion in Al x Ga1-x N/GaN/sapphire heterostructures used for microelectronic devices by SEM/EDX and SIMS depth profiling

Secondary ion mass spectrometry (SIMS) depth profiling has been applied to the study of the thermal annealing of ohmic contacts for high electron mobility transistors. The metallic stacks (Ti/Al/Ni/Au) were deposited over the Al0.28Ga0.72N/GaN/sapphire heterostructures and subjected to a rapid thermal annealing (850 A degrees C for 30 s under N-2 atmosphere) to improve the contact performance. The surface morphology and the in-depth chemical distribution of the layered contacts were severely modified due to the treatment. These modifications have been analyzed by SIMS depth profiling and scanning electron microscopy-energy-dispersive X-ray microanalysis. The SIMS analysis conditions have been optimized to achieve simultaneously good sensitivity and to avoid ion-induced mixing effects produced by the primary beam sputtering.