Strain induced k-linear spin splitting in III-V semiconductors

We present theoretical studies of the linear-k strain induced spin splitting of the conduction band in the zinc-blende semiconductors. The studies are based on ab initio calculations performed within the density functional theory with non-scalar relativistic effects fully taken into account. This permits one to construct effective Hamiltonian for the strain induced linear-k spin splitting of the zinc-blende semiconductors. This Hamiltonian reproduces fully the structure of the strain induced linear-k spin splitting and generalizes previously introduced and commonly used effective Hamiltonian.