Journal
MATERIALS LETTERS
Volume 61, Issue 19-20, Pages 4100-4102Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.matlet.2007.01.061
Keywords
sol-gel preparation; thin films; bismuth oxide; annealing temperature
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In this paper, thin and uniform bismuth oxide films were prepared by the sol-gel method. These films were annealed at different temperatures. X-ray diffraction, X-ray photoelectron spectroscopy, atom force microscopy techniques, a surface profiler and a spectrophotometer were applied to characterize these bismuth oxide films annealed at different temperatures. The results show that different annealing temperatures cause the transformation between monoclinic phase and tetragonal phase of bismuth oxides, and that bismuth oxide films annealed at 550 degrees C contain the highest intensity of tetragonal phase of bismuth oxides. (c) 2007 Elsevier B.V. All rights reserved.
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