Journal
ORGANIC ELECTRONICS
Volume 8, Issue 4, Pages 311-316Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.orgel.2006.11.005
Keywords
hybrid permeable-base transistors; tris(8-hydroxyquinoline) aluminum emitter; high gain
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We report the electrical characterization of hybrid permeable-base transistors with tris(8-hydroxyquinoline) aluminum as emitter layer. These transistors were constructed presenting an Al/n-Si/Au/Alq(3)/V2O5/Al structure. We investigate the influence of the V2O5 layer thickness and demonstrate that these devices present high common-base and common-emitter current gain, and can be operated at very low driving voltages, lower than 1 V, in both, common-base and common-emitter modes. (c) 2006 Elsevier B.V. All rights reserved.
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