Journal
APPLIED PHYSICS LETTERS
Volume 91, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2767987
Keywords
-
Categories
Ask authors/readers for more resources
Organic single-crystal transistors allowed the authors to investigate the essential features of short-channel devices. Rubrene single-crystal transistors with channel lengths of 500 and 100 nm exhibited good field-effect characteristics under extremely low operation voltages, although space charge limited current degrades the subthreshold properties of 100 nm devices. Furthermore, bias-stress measurements revealed the remarkable stability of organic single-crystal transistors regardless of device size. The bias-stress effect was explained by the trapping of gate-induced charges into localized density of states in the single-crystal channel. (c) 2007 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available