Journal
JOURNAL OF APPLIED PHYSICS
Volume 102, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2773699
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A thin diffusion barrier was self-formed by annealing at an interface between a Cu-Mn alloy film and a SiO2 substrate. The growth of the barrier layer followed a logarithmic rate law, which represents field-enhanced growth mechanism in the early stage and self-limiting growth behavior in the late stage. The barrier layer was stable at 450 degrees C for 100 h and at 600 degrees C for 10 h. The interface diffusivity was estimated from the morphology change of the barrier layer at 600 degrees C and was found to be smaller than the grain-boundary diffusivity of bulk Cu. (c) 2007 American Institute of Physics.
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