High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAlO3 gate dielectric

The structure and electrical properties of LaAlO3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors deposited by molecular-beam epitaxy were investigated. Transmission electron microscopy revealed a sharp interface between the dielectric and InGaAs. Postdeposition annealing at 440-500 degrees C significantly reduced the capacitive equivalent thickness and frequency dispersion. A hysteresis of 15 mV-0.1 V, a dielectric permittivity of 17 +/- 1, and a dielectric strength of similar to 4.3 MV/cm were measured. Additionally, a high loss in the parallel conductance and gate-bias independence in the inversion region was observed, implying the fast generation rate of minority carriers in In0.53Ga0.47As. (c) 2007 American Institute of Physics.