4.7 Article

Detection of mutant p53 using field-effect transistor biosensor

Journal

ANALYTICA CHIMICA ACTA
Volume 665, Issue 1, Pages 79-83

Publisher

ELSEVIER SCIENCE BV
DOI: 10.1016/j.aca.2010.03.006

Keywords

Metal oxide semiconductor field-effect transistor; Biosensor; p53; Mutant p53; DNA-binding domain

Funding

  1. MEST, Korea [2005-01321]
  2. KRIBB, Korea
  3. National Research Foundation of Korea [2005-01321] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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We assessed the abilities of wild p53 and mutant p53 proteins to interact with the consensus DNA-binding sequence using a MOSFET biosensor. This is the first report in which mutant p53 has been detected on the basis of DNA-protein interaction using a FET-type biosensor. In an effort to evaluate the performance of this protocol, we constructed the core domain of wild p53 and mutant p53 (R248W), which is DNA-binding-defective. After the immobilization of the cognate DNA to the sensing layer, wild p53 and mutant p53 were applied to the DNA-coated gate surface, and subsequently analyzed using a semiconductor analyzer. As a consequence, a significant up-shift in drain current was noted in response to wild p53, but not mutant p53, thereby indicating that sequence-specific DNA-protein interactions could be successfully monitored using a field-effect-based biosensor. These data also corresponded to the results obtained using surface plasmon resonance (SPR) measurements. Taken together, our results show that a FET-type biosensor might be promising for the monitoring of mutant p53 on the basis of its DNA-binding activity. providing us with very valuable insights into the monitoring for diseases, particularly those associated with DNA-protein binding events. (C) 2010 Elsevier B.V. All rights reserved.

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