Band structures of AlAs, GaP, and SiGe alloys: A 30 k x p model

The band structure of indirect-band gap semiconductors (AlAs, GaP) as well as indirect-band gap alloys semiconductors (GeSi) is described theoretically by using a 30x30 kxp model including the d far-level contribution. For all materials investigated, the resulting electronic band structure parameters are in good agreement with experimental values. The method also provides a good description of the second conduction band which is useful for transport modeling. Finally, our results show that Luttinger parameters, the kappa valence band parameter, and the effective masses in the X and L valleys are in good agreement with available experimental data. (C) 2007 American Institute of Physics.