Journal
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
Volume 13, Issue 5, Pages 1302-1308Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2007.905133
Keywords
high-speed modulation; optical interconnects; semiconductor lasers; surface-emitting lasers
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980 nm vertical-cavity surface-emitting lasers based on submonolayer growth of quantum dots show clearly open eyes and operate error free with bit error rates better than 10(-12) at 25 and 85 degrees C for 20 Gb/s without current adjustment. The peak differential efficiency only reduces from 0.71 to 0.61 W/A between 25 and 85 degrees C; the maximum output power at 25 degrees C is above 10 mW.
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