Synergetic nanowire growth

dInterest in nanowires continues to grow because they hold the promise of monolithic integration of high-performance semiconductors with new functionality(1-5) into existing silicon technology(6-8). Most nanowires are grown using vapour liquid-solid growth(9), and despite many years of study this growth mechanism remains under lively debate. In particular, the role of the metal particle is unclear(10-12). For instance, contradictory results have been reported on the effect of particle size on nanowire growth rate(13-18). Additionally, nanowire growth from a patterned array of catalysts(19,20) has shown that small wire-to-wire spacing leads to materials competition and a reduction in growth rates(21). Here, we report on a counterintuitive synergetic effect resulting in an increase of the growth rate for decreasing wire-to-wire distance. We show that the growth rate is proportional to the catalyst area fraction. The effect has its origin in the catalytic decomposition of precursors and is applicable to a variety of nanowire materials and growth techniques.