Journal
IEEE TRANSACTIONS ON MAGNETICS
Volume 43, Issue 9, Pages 3656-3660Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMAG.2007.900874
Keywords
Faraday effect; garnet films; pulsed laser deposition; ultrafast switching
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We have synthesized Bi3Fe4Ga1O12 (BIGG) films on Gd3Ga5O12 and Gd-3(ScGa)(5)O-12 substrates by a pulsed laser deposition technique. X-ray diffraction and rocking curve analyses confirm the epitaxial quality of the films with a lattice constant close to 12.61 +/- 0.01 A. Compared with that of a bismuth iron garnet Bi3Fe5O12 (BIG) film, the bandwidth of the BIGG transmittance (T) spectrum is extended and its left edge shifted down in wavelength by approximately 50 nm. This enables its Faraday rotation theta(F) and switching speed to be tested at a wavelength of 532 run. While BIGG film has a Faraday rotation angle slightly less than that of BIG film, its magnetooptical figure of merit, 2 vertical bar theta(F)d vertical bar/-(T%), is greatly improved to a typical value similar to 1.8 times larger than that of the BIG film. Further, the high-speed pulse response time of the BIGG film reaches 2.4 ns with a 1 mm aperture size at the wavelength of 532 nm.
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