Journal
IEEE ELECTRON DEVICE LETTERS
Volume 28, Issue 9, Pages 825-827Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2007.903405
Keywords
germanium (Ge); high mobility; high-kappa; MOSFET; strain
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Compressively strained Ge long channel ring-type pMOSFETs with high-kappa Si/SiO2/HfO2/TiN gate stacks are fabricated on Si0.2Ge0.8 virtual substrates. Effective oxide thickness is approximately 1.4 nm with low gate leakage current. A peak hole mobility of 640 cm(2)/V center dot s and up to a four times enhancement over the Si/SiO2 universal curve are observed. Parasitic conduction within the Si-cap layers degrades the mobility at large vertical fields, although up to a 2.5 times enhancement over universal remains at a field of 0.9 MV/cm.
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