4.4 Article

Efficient gallium-arsenide disk laser

Journal

IEEE JOURNAL OF QUANTUM ELECTRONICS
Volume 43, Issue 9-10, Pages 869-875

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JQE.2007.904074

Keywords

dielectric coating; distributed Bragg reflector (DBR); gallium arsenide (GaAs); in-well pumping; optical pumping; resonant pumping; quantum well (QW); semiconductor disk laser; vertical external-cavity surface-emitting laser (VECSEL)

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Means that may optimize the efficiency of semiconductor disk lasers (optically pumped vertical external-cavity surface-emitting lasers) are discussed: the direct pumping of the quantum wells. (QWs), the optimization of the interaction of the QWs with pump and laser field and the reduction of resonator losses by employing a dielectric/semiconductor Bragg reflector on the front face of the disk. GaAs-AlGaAs-quantum-well disk lasers designed accordingly achieved slope efficiencies of 67% and optical efficiencies of 55% (based on the absorbed pump power) with output powers well above 1 W and a pump absorption efficiency of 80%. With an additional simple pump re-imaging an output power of 1.6 W was realized with an optical efficiency of 50% related to the incident pump power.

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