Journal
MATERIALS LETTERS
Volume 61, Issue 22, Pages 4341-4343Publisher
ELSEVIER
DOI: 10.1016/j.matlet.2007.01.098
Keywords
bismuth; thin films; electrical properties; flash evaporation
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Polycrystalline Bi thin films with thickness in the range 40-160 nm have been successfully deposited on glass substrates at 453 K by flash evaporation method for the first time. XRD and FE-SEM were performed to characterize their structure and surface morphology respectively. Electrical resistivity measurement was carried out in the temperature range 300-350 K. Hall coefficient, electron concentration and mobility were measured at 300 K. A distinctly oscillatory behavior has been observed for the electrical properties of the Bi thin films. (C) 2007 Elsevier B.V All rights reserved.
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