Journal
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
Volume 13, Issue 5, Pages 1112-1121Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2007.906046
Keywords
integrated optics; ion implantation; laser tuning; quantum-confined Stark effect (QCSE); quantum well intermixing (QWI); timeable semiconductor lasers
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Funding
- EPSRC [EP/D032210/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/D037026/1, EP/D032210/1] Funding Source: researchfish
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We report a monolithically integrated InGaAsP DBR ridge waveguide laser that uses the quantum-confined Stark effect (QCSE) to achieve fast tuning response. The laser incorporates three sections: a forward-biased gain section, a reverse-biased phase section, and a reverse-biased DBR tuning section. The laser behavior is modeled using transmission matrix equations and tuning over similar to 8 nm is predicted. Devices were fabricated using post-growth shallow ion implantation to reduce the loss in the phase and DBR sections by quantum well intermixing. The lasing wavelength was measured while varying the reverse bias of the phase and DBR sections in the range 0 V to < - 2.5 V. Timing was noncontinuous over a similar to 7-nm-wavelength range, with a side-mode suppression ratio of similar to 20 dB. Coupled cavity effects due to the fabrication method used introduced discontinuities in tuning. The frequency modulation (FM) response was measured to be uniform within 2 dB over the frequency range 10 MHz to 10 GHz, indicating that tuning times of 100 ps are possible.
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