Resistive switching in a Pt/TiO2/Pt thin film stack -: a candidate for a non-volatile ReRAM

In Pt/27 nm thick TiO2/Pt stacks bipolar and unipolar resistive switching (BRS, URS) behavior of were investigated. Depending on the current compliance during electrofon-ning process, BRS or URS could be observed: With a lower current compliance (<0.1 mA) asymmetric current-voltage (IN) curves (BRS) were measured in the voltage range -1.6V to + 1.1V, while with a higher current compliance (1 to 10mA) the URS behavior was observed. Furthermore, the permanent transition from BRS to URS was investigated by applying voltage with a higher current compliance (similar to 3 mA). Preliminary results of microstructural investigations show heavily damaged regions in the stacks.