4.6 Article

Ultrasensitive, label-free, and real-time immunodetection using silicon field-effect transistors

Journal

APPLIED PHYSICS LETTERS
Volume 91, Issue 10, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.2779965

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Funding

  1. National IT Industry Promotion Agency (NIPA), Republic of Korea [2006-S-007-02] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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Ultrasensitive, label-free, and real-time prostate-specific antigen (PSA) sensor was developed using n-type silicon nanowire-based structures configured as field-effect transistors using the conventional top-down semiconductor processes. Specific binding of PSA with antibody of PSA (anti-PSA) immobilized on the Si surface through covalent linkage leads to a conductivity change in response to variations of electric field at the surface. The conductance changes depending on PSA concentrations and pH values in solution according to isoelectric point of PSA provide the evidence of the real-time detection of 1 fg/ml PSA. The authors also explored the sensitivity of PSA immunodetection depending on both Si-field-effect transistors (FET) dimensions and doping concentrations to provide strategy for fabrication of an ultrasensitive Si-FET biosensor. (C) 2007 American Institute of Physics.

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