Journal
APPLIED PHYSICS LETTERS
Volume 91, Issue 11, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2783214
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- Engineering and Physical Sciences Research Council [EP/C535553/1] Funding Source: researchfish
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The valence band offset of wurtzite InN(0001)/yttria stabilized cubic-zirconia (YSZ)(111) heterojunctions is determined by x-ray photoemission spectroscopy to be 1.19 +/- 0.17 eV giving a conduction band offset of 3.06 +/- 0.20 eV. Consequently, a type-I heterojunction forms between InN and YSZ in the straddling arrangement. The low lattice mismatch and high band offsets suggest potential for use of YSZ as a gate dielectric in high-frequency InN-based electronic devices.
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