Journal
APPLIED PHYSICS LETTERS
Volume 91, Issue 11, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2783222
Keywords
-
Categories
Ask authors/readers for more resources
Raman backscattering measurements were performed on single crystal ZnO for different excitation wavelengths before and after ion implantation with hydrogen and nitrogen. In addition to the formation of H- and N-related defects due to implantation, anomalous Raman modes were observed. Recently, the anomalous Raman modes have been attributed to the disorder-induced activation of silent modes. However, we will show that part of the observed modes are due to the resonantly enhanced longitudinal optical phonons.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available