Journal
APPLIED PHYSICS LETTERS
Volume 91, Issue 11, Pages -Publisher
AIP Publishing
DOI: 10.1063/1.2785152
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The authors performed a systematic study of the structural and electrical properties of Nb:TiO2 thin films by varying the substrate temperature (T-S) and oxygen partial pressure (P-O2). Niobium is found to incorporate easily and substitutionally into titanium lattice site as indicated by its low activation energy. By increasing T-S, the carrier concentration (n) increases in the same way that niobium substitution fraction (s) increases, and the mobility increases as the structural quality is improved. With increasing P-O2, n decreases dramatically though s does not change considerably. This may indicate that a large number of p-type native defects form, which kill the electrons produced by the Nb donors.
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