Journal
APPLIED PHYSICS LETTERS
Volume 91, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2789701
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The purpose of this paper is to understand metal/germanium (Ge) junction characteristics. Electrode metals with a wide work function range were deposited on Ge. All metal/p-Ge and metal/n-Ge junctions have shown Ohmic and Schottky characteristics, respectively, with the strong Fermi-level pinning. The charge neutrality level (CNL) at metal/Ge interface is close to the branch point calculated for the bulk Ge. Moreover, the pinning level is hardly modulated by annealing in forming gas, forming metal-germanide/Ge interfaces or changing the substrate orientation. These results suggest that Fermi level at metal/Ge interface is intrinsically pinned at the CNL characterized by the metal-induced gap states model. (c) 2007 American Institute of Physics.
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