Journal
APPLIED PHYSICS LETTERS
Volume 91, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2783189
Keywords
-
Categories
Ask authors/readers for more resources
Current-voltage measurements on the Al/[CdSe/ZnS nanoparticles embedded in a hole-transporting poly(N-vinylcarbazole) (PVK) layer]/indium tin oxide (ITO)/glass structures at 300 K showed a nonvolatile electrical bistability behavior. Capacitance-voltage (C-V) measurements on the Al/[CdSe/ZnS nanoparticles embedded in a PVK layer]/ITO/glass structures at 300 K showed a metal-insulator-semiconductor behavior with a flatband voltage shift due to the existence of the CdSe/ZnS nanoparticles, indicative of trapping, storing, and emission of charges in the electronic states of the CdSe nanoparticles. Operating mechanisms for the Al/[CdSe/ZnS nanoparticles embedded in the PVK layer]/ITO/glass devices are described on the basis of the C-V results. (c) 2007 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available